參數(shù)資料
型號： DMN2114SN
廠商： Diodes Inc.
英文描述： N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述： N溝道增強型場效應(yīng)管
文件頁數(shù)： 2/4頁
文件大小： 176K
代理商： DMN2114SN
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
N
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
BV
DSS
20
V
V
GS
= 0V, I
D
= 250
μ
A
Zero Gate Voltage Drain Current @ T
j
= 25°C
Gate-Body Leakage
I
DSS
10
μ
A
V
DS
= 24V, V
GS
= 0V
I
GSS
±
10
μ
A
V
GS
=
±
12V, V
DS
= 0V
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
V
GS(th)
0.7
1.40
V
V
DS
= 10V, I
D
= 1.0mA
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 2.5V, I
D
= 0.5A
V
DS
= 10V, I
D
= 0.5A
Static Drain-Source On-Resistance
R
DS (ON)
0.100
0.160
Ω
Forward Transfer Admittance
|Y
fs
|
3.3
S
Diode Forward Voltage
V
SD
0.8
1.1
V
V
GS
= 0V, I
S
= 1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
180
pF
Output Capacitance
C
oss
120
pF
Reverse Transfer Capacitance
C
rss
45
pF
V
DS
= 10V, V
GS
= 0V,
f
= 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
10
ns
Turn-Off Delay Time
t
D(OFF)
50
ns
Turn-On Rise Time
t
r
15
ns
Turn-Off Fall Time
t
f
45
ns
V
DD
= 10V, I
D
= 0.5A,
V
GS
= 5.0V, R
GEN
=
50
Ω
3V, 3.5V, 4V, 5V
3.0V
2.5V
V
GS
= 1.5V
2.0V
V = 10V
T = -55°C
T = 25°C
T = 125°C
DS30829 Rev. 3 - 2
2 of 4
www.diodes.com
DMN2114SN
Diodes Incorporated
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DMN2114SN_0709 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2114SN-7 功能描述:MOSFET 20V 1.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DMN2170U 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2170U-7 功能描述:MOSFET 600mW 20Vdss RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
DMN21D2UFB-7B 功能描述:MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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