參數(shù)資料
型號： DMN2112SN
廠商： Diodes Inc.
英文描述： N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述： N溝道增強型場效應(yīng)管
文件頁數(shù)： 1/3頁
文件大?。?/td> 193K
代理商： DMN2112SN
DMN2112SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
N
Features
Low On-Resistance
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
Lead Free By Design/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
ESD Protected Gate
"Green" Device (Note 3)
Mechanical Data
Case: SC-59
Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
SC-59
Min
0.30
1.40
2.50
0.85
0.30
1.70
2.70
1.00
0.55
0.10
0°
Dim
A
B
C
D
E
G
H
J
K
L
M
α
All Dimensions in mm
Max
0.50
1.80
3.00
1.05
0.70
2.10
3.10
0.10
1.40
0.70
0.35
8°
A
E
J
L
TOP VIEW
M
B
C
H
G
D
K
D
G
S
Source
EQUIVALENT CIRCUIT
Gate
Gate
Drain
ESD Protected
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
V
DSS
V
GSS
Value
20
± 8
1.2
4.0
500
250
-55 to +150
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Pulsed
I
D
A
P
d
R
θ
JA
T
j
, T
STG
mW
°
C /W
°
C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
20
10
±
10
V
μA
μA
V
GS
= 0V, I
D
= 250μA
V
DS
= 20V, V
GS
= 0V
V
GS
=
±
8V, V
DS
= 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
@ T
j
= 25
°
C
V
GS(th)
0.5
1.2
V
V
DS
= 10V, I
D
= 1.0mA
Static Drain-Source On-Resistance
R
DS (ON)
0.10
0.14
0.25
Ω
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 2.5V, I
D
= 0.5A
V
GS
= 1.5V, I
D
= 0.1A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Notes: 1. Pulse width
≤
300
μ
s, duty cycle
≤
2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
IY
fs
I
V
SD
4.2
0.8
1.1
S
V
V
DS
= 10V, I
D
=0.5A
V
GS
= 0V, I
S
= 1A
C
iss
C
oss
C
rss
220
120
45
pF
pF
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
t
D(ON)
t
D(OFF)
t
r
t
f
10
75
15
65
ns
ns
ns
ns
V
DD
= 5V, I
D
= 0.5A,
V
GS
= 10V, R
GEN
= 50
Ω
DS30830 Rev. 3 - 2
1 of 3
www.diodes.com
DMN2112SN
Diodes Incorporated
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參數(shù)描述
DMN2112SN_0711 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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DMN2114SN 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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