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參數資料
| 型號： | DMN2005K |
| 廠商： | Diodes Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 219K |
| 代理商： | DMN2005K |
DS30734 Rev. 3 - 2
1 of 4
www.diodes.com
DMN2005K
Diodes Incorporated
DMN2005K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
N
N
Features
A
E
J
L
TOP VIEW
M
B
C
H
G
D
D
K
Low On-Resistance
Very Low Gate Threshold Voltage, 0.9V Max.
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
ESD Protected Gate
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish
Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking: See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0
°
8
°
All Dimensions in mm
Source
Body
Diode
Gate
Gate
Protection
Diode
Drain
ESD protected
EQUIVALENT CIRCUIT
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
V
GSS
20
V
Gate-Source Voltage
Drain Current per element (Note 1) Continuous
Pulsed (Note 3)
Total Power Dissipation (Note 1)
±
10
300
600
350
V
I
D
mA
P
d
mW
Thermal Resistance, Junction to Ambient
R
θ
JA
357
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width
≤
10
μ
S, Duty Cycle
≤
1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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| DMN2005LPK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| DMN2005K_0711 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005K-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| DMN2005LP4K | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K_09 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K-7 | 功能描述:MOSFET 30V 300mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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