參數(shù)資料
型號(hào): DMN100-7-F
廠商: DIODES INC
元件分類: 功率晶體管
英文描述: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述: 1100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: GREEN, PLASTIC, SC-59, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 75K
代理商: DMN100-7-F
Lead-free Green
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
DS30049 Rev. 6 - 2
1 of 3
DMN100
www.diodes.com
Diodes Incorporated
DMN100
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
Extremely Low On-Resistance:
170m
@ V
GS
= 4.5V
High Drain Current: 1.1A
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
Lead Free By Design/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
ESD Protected Gate
"Green" Device (Note 3)
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
DMN100
Units
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
Continuous
V
GSS
20
V
Drain Current
Continuous
Pulsed
I
D
1.1
4.0
A
Total Power Dissipation
P
d
500
mW
Thermal Resistance, Junction to Ambient
R
JA
250
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Notes: 1. Pulse width
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
300 s, duty cycle
2%.
Case: SC-59
Case Material - Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Weight: 0.008 grams (approximate)
Mechanical Data
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
D
S
G
SC-59
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
All Dimensions in mm
Max
0.30
0.50
1.40
1.80
2.50
3.00
0.85
1.05
0.30
0.70
1.70
2.10
2.70
3.10
0.10
1.00
1.40
0.55
0.70
0.10
0.35
ESD protected
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