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參數(shù)資料
| 型號： | DMEG250 |
| 英文描述： | TRANSISTOR | BJT | NPN | 30A I(C) | FO-231VAR |
| 中文描述： | 晶體管|晶體管|叩| 30A條一（c）|佛231VAR |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 279K |
| 代理商： | DMEG250 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
DMEG 250
250 Watts, 50 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The DMEG 250 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input and output prematch for broadband capability. Low
thermal resistance package reduces junction temperature, extends life.
CASE OUTLINE
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 875 Watts
2
Maximum Voltage and Current
BVces Collector to Base Voltage 55 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 30 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
Vcc = 50 Volts
PW = 10
μ
sec
DF = 5%
F = 1090 MHz
60
Watts
dB
%
Power Out
F = 960-1215 MHz
250
Watts
6.2
35
5:1
BVebo
BVces
Cob
h
FE
θ
jc
2
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Collector to Emitter Breakdown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
Ic = 25 mA
Vcb = 50 Volts
Ic = 1 mA, Vce = 5 V
55
Volts
Emitter to Base Breakdown
Ie = 20 mA
4.0
Volts
10
pF
C/W
0.2
o
Issue A, July 1997
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