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參數(shù)資料
| 型號： | DM2213T-12 |
| 英文描述： | Enhanced DRAM (EDRAM) |
| 中文描述： | 增強的DRAM（eDRAM內存） |
| 文件頁數(shù)： | 6/21頁 |
| 文件大?。?/td> | 124K |
| 代理商： | DM2213T-12 |
2-40
Ambient Operating Temperature (T
A
)
Storage Temperature (T
S
)
Static Discharge Voltage
(Per MIL-STD-883 Method 3015)
Description
Ratings
Output Voltage (V
OUT
)
Power Supply Voltage (V
CC
)
Short Circuit O/P Current (I
OUT
)
*One output at a time; short duration.
- 1 ~ V
CC
+1
- 1 ~ V
CC
+1
- 1 ~ 7v
Input Voltage (V
IN
)
-40 ~ +85°C
-55 ~ 150°C
Class 1
50mA*
Absolute MaximumRatings
(Beyond Which Permanent Damage Could Result)
Description
Max
Pins
Input Capacitance
Input Capacitance
2pf
5pf
A
0-10
/G
Input Capacitance
6pf
/RE, /CAL, W/R, /WE, /F, /S, QLE
I/O Capacitance
6pf
DQ
0-7
Output Capacitance
4pf
/HIT
Capacitance
Pin Names
A
0-10
Address Inputs
Row Enable
Data In/Data Out
Column Address Latch
Write/Read Control
Power (+5V)
DQ
0-7
/CAL
W/R
V
CC
/RE
/HIT
QLE
Hit Output
Output Latch Enable
/WE
/G
Write Enable
Output Enable
Ground
V
SS
/F
/S
Chip Select
Refresh Control
Pin Names
Function
Function
NC
Not Connected
Pin Names
R
1
= 828
≤
5ns
V
IL
GND
5.0V
Output
C
L
= 50pf
R
2
= 295
Load Circuit
Input Waveforms
≤
5ns
V
IH
V
IL
V
IH
AC Test Load and Waveforms
VINTiming Reference Point at VILand VIH
VOUTTiming Referenced to 1.5 Volts
相關PDF資料 |
PDF描述 |
|---|---|
| DM2213T-12I | Enhanced DRAM (EDRAM) |
| DM2213T-15 | Enhanced DRAM (EDRAM) |
| DM2213T-15I | Enhanced DRAM (EDRAM) |
| DM2213T-20 | Enhanced DRAM (EDRAM) |
| DM2213TME-15 | Enhanced DRAM (EDRAM) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DM2213T-12I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM) |
| DM2213T-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM) |
| DM2213T-15I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM) |
| DM2213T-20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM) |
| DM2213TME-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM) |
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