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參數(shù)資料
| 型號： | DM2202T1-12I |
| 英文描述： | Enhanced DRAM (EDRAM) |
| 中文描述： | 增強(qiáng)的DRAM（eDRAM內(nèi)存） |
| 文件頁數(shù)： | 6/19頁 |
| 文件大?。?/td> | 159K |
| 代理商： | DM2202T1-12I |
Symbol
Description
t
AC
(1)
t
ASC
t
ASR
t
C
t
C1
t
CAE
t
CAH
t
CH
t
CQV
t
CRP
t
CWL
t
DH
t
DS
t
GQV
(1)
t
GQX
(2,3)
t
GQZ
(4,5)
Column Address Access Time
Column Address Setup Time
Row Enable Cycle Time
Row Enable Cycle Time, Cache Hit (Row=LRR), Read Cycle Only
Row Address Setup Time
Column Address Latch Active Time
Column Address Hold Time
Column Address Latch High Time (Latch Transparent)
Column Address Latch High to Data Valid
Column Address Latch Inactive to Data Invalid
Column Address Latch Setup Time to Row Enable
/WE Low to /CAL Inactive
Data Input Hold Time
Data Input Setup Time
Output Enable Access Time
Output Enable to Output Drive Time
5
5
55
20
5
5
5
5
0
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Min
Max
Units
12
5
0
15
0
5
t
AQX
Column Address Change to Output Data Invalid
ns
5
t
ACH
Column Address Valid to /CAL Inactive (Write Cycle)
ns
12
5
Min
Max
-12
-15
t
CQX
t
NRS
t
PC
t
RAC
(1)
t
RAC1
(1)
t
RAC2
(1,6)
t
RAH
t
RE
Output Turn-Off Delay From Output Disabled (/G
↑
)
/CAL, /G, W/R, and /WE Setup Time For /RE-Only Refresh
Column Address Latch Cycle Time
Row Address Hold Time
Row Enable Access Time, On a Cache Miss
t
NRH
/CAL, /G, W/R, and /WE Hold Time For /RE-Only Refresh
t
MSU
/F and W/R Mode Select Setup Time
t
MH
/F and W/R Mode Select Hold Time
ns
0
5
ns
0
ns
5
ns
0
ns
5
ns
12
ns
30
ns
Row Enable Access Time for a Cache Write Hit
ns
30
1
t
CHR
/CAL Inactive Lead Time to /RE Inactive (Write Cycles Only)
-2
ns
t
CHW
Column Address Latch High to Write Enable Low (Multiple Writes)
0
ns
Row Enable Access Time, On a Cache Hit (Limit Becomes t
AC
)
15
ns
t
DMH
Mask Hold Time From Row Enable (Write-Per-Bit)
5
ns
t
DMS
Mask Setup Time to Row Enable (Write-Per-Bit)
ns
Row Enable Active Time
ns
30
100000
1
5
5
65
25
5
5
5
5
0
5
15
6
0
17
0
5
5
15
5
0
5
0
5
0
5
15
35
35
1.5
-2
0
17
5
35
100000
1.5
Switching Characteristics
V
CC
= 5V ± 5% (+5 Volt Option), V
CC
= 3.3V ± 0.3V (+3.3 Volt Option), C
L
= 50pf, T
A
= 0 to 70°C (Commercial), -40 to 85°C (Industrial)
1-24
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DM2202T1-12L | Enhanced DRAM (EDRAM) |
| DM2202T1-15 | Enhanced DRAM (EDRAM) |
| DM2202T1-15I | Enhanced DRAM (EDRAM) |
| DM2202T1-15L | Enhanced DRAM (EDRAM) |
| DM2202T-12 | Enhanced DRAM (EDRAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DM2202T1-12L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM) |
| DM2202T1-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM) |
| DM2202T1-15I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM) |
| DM2202T1-15L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM) |
| DM2202T-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM) |
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