參數(shù)資料
型號: DM2200J-20
英文描述: Enhanced DRAM (EDRAM)
中文描述: 增強的DRAM(eDRAM內(nèi)存)
文件頁數(shù): 18/19頁
文件大?。?/td> 159K
代理商: DM2200J-20
1-36
/F, W/R,
/WE, /S
t
RP2
t
MSU
t
MH
t
MSU
t
MH
/RE
Don’t Care or Indeterminate
NOTES: 1. EDRAMself refreshes as long as /RE remains low (LowPower Self Refresh part only).
2. When using the LowPower Self Refresh mode the followng operations must be performed:
If rowaddresses are being refreshed in an
evenly distributed
manner over the refresh interval using /F refresh cycles, then at least
one /F refresh cycle must be performed immediately after exit fromthe LowPower Self Refesh Mode. If rowaddresses are being
refreshed in any other manner (/F burst or /RE distributed or burst), then all rows must be refreshed immediately befor entry to
and immediately after exit fromthe LowPower Self Refresh.
A
0-10
/CAL
Low Power Self-Refresh Mode Option
DM2202J 1 - 12I
Dynamic Memory
Capacity in Bits
i.e., Power to Which 2 is Raised for Total Capacity (4Mbit)
I/OWidth
i.e., Power to Which 2 is Raised for I/O Width (x4)
Packaging System
J = 300 Mil, Plastic SOJ
T = 300 Mil, Plastic TSOP-II
Access Time from Cache in Nanoseconds
12ns
15ns
Power Supply Voltage
No Designator = +5 Volts
1 = +3.3 Volts
Temperature Range
No Designator = 0 to 70
o
C (Commercial)
I = -40 to +85
o
C (Industrial)
L = 0 to 70
o
C, Low Power Self-Refresh
Special Feature Field
0 = No Write-Per-Bit
1 = Write-Per-Bit
Part Numbering System
相關PDF資料
PDF描述
DM2200T1-12 Enhanced DRAM (EDRAM)
DM2200T1-12I Enhanced DRAM (EDRAM)
DM2200T1-12L Enhanced DRAM (EDRAM)
DM2200T1-15 Enhanced DRAM (EDRAM)
DM2200T1-15I Enhanced DRAM (EDRAM)
相關代理商/技術參數(shù)
參數(shù)描述
DM2200T1-12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM)
DM2200T1-12I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM)
DM2200T1-12L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM)
DM2200T1-15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM)
DM2200T1-15I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Enhanced DRAM (EDRAM)