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參數(shù)資料
| 型號(hào)： | DKV6510-12 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | SILICON HYPERABRUPT VARACTOR DIODE |
| 中文描述： | UHF BAND, 60 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 15K |
| 代理商： | DKV6510-12 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-300
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
V
BR
I
R
= 10
μ
A
NONE
TEST CONDITIONS
MINIMUM
12
TYPICAL
MAXIMUM
UNITS
V
I
R
V
R
= 10 V
100
m
A
C
T2
V
R
= 2.0 V f = 1.0 MHz
45
75
pF
C
T10
V
R
= 10 V f = 1.0 MHz
4.0
7.0
pF
C
T2
/ C
T10
V
R
= 2 & 10 V f = 1.0 MHz
10.0
17.0
---
Q
V
R
= 2.0 V f = 1.0 MHz
200
700
---
SILICON HYPERABRUPT VARACTOR DIODE
DKV6510-12
DESCRIPTION:
The
ASI DKV6510-12
is an Ion
Implanted Silicon Hyperabrupt Varactor
Diode Designed for Octave Tuning up
to 500 MHz.
FEATURES INCLUDE:
Large Tuning Ratio –
14:1
Typ.
High
Q – 700
Typ.
Hermetic Glass
DO-7
Package
MAXIMUM RATINGS
I
F
100 mA
V
R
12 V
P
DISS
400 mW @ T
C
= 25
O
C
-55
O
C to +150
O
C
-65
O
C to +200
O
C
T
J
T
STG
PACKAGE STYLE DO-7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DKV6516 | TUNING VARACTOR |
| DKV6520-12 | SILICON HYPERABRUPT VARACTOR DIODE |
| DKV6522-12 | SILICON HYPERABRUPT VARACTOR DIODE |
| DKV6522-24 | SILICON HYPERABRUPT VARACTOR DIODE |
| DKV6522B | SILICON HYPERABRUPT VARACTOR DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DKV6516 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:TUNING VARACTOR |
| DKV6520-12 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:SILICON HYPERABRUPT VARACTOR DIODE |
| DKV6522 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:SILICON HYPERABRUPT TUNING VARACTOR DIODE |
| DKV6522-12 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:SILICON HYPERABRUPT VARACTOR DIODE |
| DKV6522-24 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:SILICON HYPERABRUPT VARACTOR DIODE |
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