參數(shù)資料
型號: DIM800DDM12-A
英文描述: IGBT Modules - Dual Switch
中文描述: IGBT模塊-雙開關(guān)
文件頁數(shù): 2/10頁
文件大?。?/td> 203K
代理商: DIM800DDM12-A
DIM800NSM33-A000
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Test Conditions
V
GE
= 0V
-
T
case
= 85C
1ms, T
case
= 115C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 3500V, V
2
= 2600V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
Units
V
V
A
A
kW
kA
2
s
V
pC
Max.
3300
±
20
800
1600
10.4
320
6000
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value (Diode arm)
Isolation voltage - per module
Partial discharge - per module
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