
DIM250WHS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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KEY PARAMETERS
V
CES
V
CE(sat)
*
I
C
I
C(PK)
600V
(typ)
2.1V
(max) 250A
(max) 500A
*(measured at the power busbars and not the auxiliary terminals)
FEATURES
I
n - Channel
I
High Switching Speed
I
Low Forward Voltage Drop
I
Isolated Base
APPLICATIONS
I
PWM Motor Contro
l
I
UPS
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
The DIM250WHS06-S000 is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
ORDERING INFORMATION
Order as:
DIM250WHS06-S000
Note: When ordering, use complete part number.
Fig. 1 Half bridge circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: W
(See package details for further information)
PDS5676-1.3 February 2004
DIM250WHS06-S000
Half Bridge IGBT Module
3(C1)
1(E1C2)
2(E2)
6(G
2
)
7(E
2
)
5(E
1
)
4(G
1
)