參數(shù)資料
型號: DIM200MHS17-A000
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: IGBT 晶體管
英文描述: Half Bridge IGBT Module
中文描述: 200 A, 1700 V, N-CHANNEL IGBT
封裝: M, 11 PIN
文件頁數(shù): 1/10頁
文件大?。?/td> 147K
代理商: DIM200MHS17-A000
DIM200MHS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10
FEATURES
I
10
μ
s Short Circuit Withstand
I
Non Punch Through Silicon
I
Isolated Copper Base
APPLICATIONS
I
Inverters
I
Motor Controllers
I
Traction Drives
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM200MHS17-A000 is a half bridge 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10
μ
s short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200MHS17-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
V
CE(sat)
*
I
C
I
C(PK)
*(measured at the power busbars and not the auxiliary terminals)
1700V
2.7V
200A
400A
(typ)
(max)
(max)
DIM200MHS17-A000
Half Bridge IGBT Module
Replaces issue February 2002, version DS5459-3.0
DS5459-4.0 March 2002
Fig. 1 Half bridge circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code:
M
(See package details for further information)
3(C1)
2(E2)
1(E1C2)
11(C
2
)
9(C
1
)
6(G
2
)
7(E
2
)
5(E
1
)
4(G
1
)
1
2
3
11
10
8
9
5
4
6
7
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