
DIM1800ESM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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FEATURES
I
10
μ
s Short Circuit Withstand
I
High Thermal Cycling Capability
I
Non Punch Through Silicon
I
Isolated MMC Base with AlN Substrates
APPLICATIONS
I
High Reliability Inverters
I
Motor Controllers
I
Traction Drives
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM1800ESM12-A000 is a single switch 1200V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10
μ
s short circuit withstand.
This module is optimised for applications requiring high thermal
cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1800ESM12-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
V
CE(sat)
*
I
C
I
C(PK)
*(measured at the power busbars and not the auxiliary terminals)
1200V
2.2V
1800A
3600A
(typ)
(max)
(max)
DIM1800ESM12-A000
Single Switch IGBT Module
Replaces July 2002, version DS5529-2.1
DS5529-3.0 March 2003
Fig. 1 Single switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code:
E
(See package details for further information)
C2
C1
Aux C
G
Aux E
E1
E2
E3
External connection
External connection
C3