參數(shù)資料
型號: DIM100CHS17-A
英文描述: IGBT Modules - Half Bridge
中文描述: IGBT模塊-半橋
文件頁數(shù): 1/8頁
文件大小: 185K
代理商: DIM100CHS17-A
DIM100CHS12-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/8
PDS5682-1.2 January 2004
FEATURES
I
Trench Gate Field Stop Technology
I
Low Conduction Losses
I
Low Switching Losses
I
10
μ
s Short Circuit Withstand
APPLICATIONS
I
Motor Drives
I
Wind Turbines
I
UPS Systems
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM100CHS12-E000 is a half bridge 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10
μ
s short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM100CHS12-E000
Note: When ordering, please use the complete part number.
KEY PARAMETERS
V
CES
V
CE(sat)
I
C
I
C(PK)
1200V
1.7V
100A
200A
(typ)
(max)
(max)
DIM100CHS12-E000
Half Bridge IGBT Module
Fig. 1 Half bridge circuit diagram
Fig. 2 Module Outline
Outline type code:
C
(See package details for further information)
3(C1)
1(E1C2)
2(E2)
6(G
2
)
7(E
2
)
5(E
1
)
4(G
1
)
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