參數(shù)資料
型號: DG9461DY-T1-E3
廠商: Vishay Siliconix
文件頁數(shù): 3/8頁
文件大?。?/td> 0K
描述: IC SWITCH LV SPDT 8SOIC
標準包裝: 2,500
功能: 開關
電路: 1 x SPDT
導通狀態(tài)電阻: 60 歐姆
電壓電源: 單電源
電壓 - 電源,單路/雙路(±): 2.7 V ~ 5 V
電流 - 電源: 1µA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: 8-SOICN
包裝: 帶卷 (TR)
Document Number: 70832
S-71009–Rev. C, 14-May-07
www.vishay.com
3
Vishay Siliconix
DG9461
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Difference of min and max values.
g. Guraranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 5 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %, VIN = 0.8 or 2.4 V
e
Tempa
D Suffix
- 40 to 85 °C
Unit
Minc
Typb
Maxc
Analog Switch
Analog Signal Ranged
VANALOG
Full
0
5
V
Drain-Source On-Resistance
rDS(on)
VNO or VNC = 3.5 V, V+ = 4.5 V
ICOM = 5 mA
Room
Full
30
60
75
Ω
rDS(on)Match
d
Δr
DS(on)
VNO or VNC = 1.5 V
Room
0.4
2
rDS(on) Flatness
f
rDS(on)
Flatness
VNO or VNC = 1,2 and 3 V
Room
2
6
NO or NC Off Leakage Current
INO/NC(off)
VNO or VNC = 1 V/4 V, VCOM = 4 V/1 V
Room
Full
- 100
- 5000
10
100
5000
pA
COM Off Leakage Current
ICOM(off)
VCOM = 1 V/4 V, VNO or VNC = 4 V/1 V
Room
Full
- 100
- 5000
10
100
5000
Channel-On Leakage Current
ICOM(on)
VCOM = VNO or VNC = 1 V/4 V
Room
Full
- 200
- 10000
200
10000
Digital Control
Input Current
IINL or IINH
Full
1
A
Dynamic Characteristics
Turn-On Time
tON
VNO or VNC = 3.0 V
Room
Full
35
75
150
ns
Turn-Off Time
tOFF
Room
Full
20
50
100
Break-Before-Make Time
td
Room
3
10
Charge Injection
QINJ
CL = 1 nF, Vgen = 0 V, Rgen = 0 Ω
Room
2
5
pC
Off-Isolation
OIRR
RL = 50 Ω, CL = 5 pF, f = 1 MHz
Room
- 74
dB
NC and NO Capacitance
C(off)
f = 1 MHz
Room
- 7
pF
Channel-On Capacitance
CD(on)
Room
32
Power Supply
Power Supply Range
V+
2.7
12
V
Power Supply Current
I+
V+ = 5.5 V, VIN = 0 or 5.5 V
1A
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