參數(shù)資料
型號(hào): DG541DY-E3
廠商: Vishay Siliconix
文件頁(yè)數(shù): 13/18頁(yè)
文件大?。?/td> 0K
描述: IC SWITCH QUAD SPST 16SOIC
標(biāo)準(zhǔn)包裝: 500
功能: 視頻開(kāi)關(guān)
電路: 4 x SPST - NO
導(dǎo)通狀態(tài)電阻: 60 歐姆
電壓電源: 單/雙電源
電壓 - 電源,單路/雙路(±): 10 V ~ 18 V,±10 V ~ 15 V
電流 - 電源: 3.5mA
工作溫度: -40°C ~ 85°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 16-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 16-SOIC N
包裝: 管件
www.vishay.com
4
Document Number: 70055
S11-1429–Rev. H, 18-Jul-11
Vishay Siliconix
DG540, DG541, DG542
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa
Parameter
Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 3 V
VINH = 2 V, VINL = 0.8 V
f
Temp.b
Typ.c
A Suffix
- 55 °C to 125 °C
D Suffixes
- 40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
Analog Switch
Analog Signal Range
VANALOG
V- = - 5 V, V+ = 12
Full
- 5
5
- 5
5
V
Drain-Source
On-Resistance
RDS(on)
IS = - 10 mA, VD = 0 V
Room
Full
30
60
100
60
75
RDS(on) Match
R
DS(on)
Room
2
6
Source Off Leakage Current
IS(off)
VS = 0 V, VD = 10 V
Room
Full
- 0.05
- 10
- 500
10
500
- 10
- 100
10
100
nA
Drain Off Leakage Current
ID(off)
VS = 10 V, VD = 0 V
Room
Full
- 0.05
- 10
- 500
10
500
- 10
- 100
10
100
Channel On Leakage Current
ID(on)
VS = VD = 0 V
Room
Full
- 0.05
- 10
- 1000
10
1000
- 10
- 100
10
100
Digital Control
Input Voltage High
VINH
Full
2
V
Input Voltage Low
VINL
Full
0.8
Input Current
IIN
VIN = GND or V+
Room
Full
0.05
- 1
- 20
1
20
- 1
- 20
1
20
A
Dynamic Characteristics
On State Input Capacitancee
CS(on)
VS = VD = 0 V
Room
14
20
pF
Off State Input Capacitancee
CS(off)
VS = 0 V
Room
2
4
Off State Output Capacitancee
CD(off)
VD = 0 V
Room
2
4
Bandwidth
BW
RL = 50 , See Figure 5
Room
500
MHz
Turn-On Time
tON
RL = 1 k
CL = 35 pF
50 % to 90 %
See Figure 2
DG540
DG541
Room
Full
45
70
130
70
130
ns
DG542
Room
Full
55
100
160
100
160
Turn-Off Time
tOFF
DG540
DG541
Room
Full
20
50
85
50
85
DG542
Room
Full
25
60
85
60
85
Charge Injection
Q
CL = 1000 pF, VS = 0 V
See Figure 3
Room
- 25
pC
Off Isolation
OIRR
RIN = 75 RL = 75
f = 5 MHz
See Figure 4
DG540
Room
- 80
dB
DG541
Room
- 60
DG542
Room
- 75
All Hostile Crosstalk
XTALK(AH)
RIN = 10 , RL = 75
f = 5 MHz, See Figure 6
Room
- 85
Power Supplies
Positive Supply Current
I+
All Channels On or Off
Room
Full
3.5
6
9
6
9
mA
Negative Supply Current
I-
Room
Full
- 3.2
- 6
- 9
- 6
- 9
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