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Monolithic CMOS Analog Multiplexers
2
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ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V+ = 15V, V- = -15V, VGND = 0V, TA = +25°C, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Voltage Referenced to V-
V+ .....................................................................................+44V
GND ................................................................................. +25V
Digital Inputs, VS and VD (Note 1)...................-2V to (V+ + 2V)
or 20mA, whichever occurs first
Current (any terminal, except S or D) .................................30mA
Continuous Current, S or D .................................................20mA
Peak Current, S or D (pulsed at 1ms, 10% duty cycle max) ..40mA
Continuous Power Dissipation (TA = +70°C)
Plastic DIP (derate 10.53mW/°C above +70°C) ...........842mW
Narrow SO (derate 8.70mWI°C above +70°C) .............696mW
Wide SO (derate 9.52mW/°C above +70°C).................762mW
CERDIP (derate 10.00mW/°C above +70°C) ................800mW
Operating Temperature Ranges:
DG50_ACJ/CWE ..................................................0°C to +70°C
DG50_ABK........................................................-20°C to +85°C
DG50_ADJ/DY/EWE..........................................-40°C to +85°C
DG50_AAK/MY ...............................................-55°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow)
PDIP, Wide SO, Narrow SO, CERDIP containing lead(Pb)..+240°C
PDIP, Wide SO, Narrow SO lead(Pb)-free ....................+260°C
DG508A/DG509A
Note 1: Signals on S_ or D_ exceeding V+ or V- are clamped by internal diodes. Limit forward-diode current to maximum current ratings
DG508AA/M
DG509AA/M
DG508AD/E/B/C
DG509AD/E/B/C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
SWITCH
Analog Signal
VANALOG
-15
+15
-15
+15
V
VD = 10V,
IS = -200μA
170
400
170
450
Drain-Source On-
Resistance
RDS(ON)
Sequence each
switch on,
VA_L = 0.8V,
VA_H = 2.4V (Note 4)
VD = -10V,
IS = 200μA
130
400
130
450
Greatest Change
in Drain-Source
On-Resistance
Between Channels
RDS(ON)
=
RDS(ON) max RDS(ON) min
RDS(ON)
-10V
VS
10V
6
%
VS = 10V, VD = -10V
0.002
0.5
0.002
1
Source Off-
Leakage Current
IS(OFF)
VEN = 0V
VS = -10V, VD = 10V
-0.5
-0.005
-1
-0.005
nA
VD = 10V, VS = -10V
0.01
2
0.01
5
DG508A
VD = -10V, VS = 10V
-2
-0.015
-5
-0.015
VD = 10V, VS = -10V
0.005
2
0.005
5
Drain Off-
Leakage
Current
DG509A
ID(OFF)
VEN = 0V
VD = -10V, VS = 10V
-2
-0.008
-5
-0.008
nA
VS(all) = VD = 10V
0.015
2
0.015
5
DG508A
VS(all) = VD = -10V
-2
-0.03
-5
-0.03
VS(all) = VD = 10V
0.007
2
0.007
5
Drain On-
Leakage
Current
DG509A
ID(ON)
Sequence each
switch on,
VA_L = 0.8V
VA_H = 2.4V
(Note 2)
VS(all) = VD = -10V
-2
-0.015
-5
-0.015
nA