參數(shù)資料
型號(hào)： DG429DN-E3
廠商： Vishay Siliconix
文件頁數(shù)： 10/14頁
文件大?。?/td> 0K
描述： IC MUX ANLG 8CH W/LATCH 20PLCC
標(biāo)準(zhǔn)包裝： 500
功能： 多路復(fù)用器
電路： 2 x 4:1
導(dǎo)通狀態(tài)電阻： 150 歐姆
電壓電源： 單/雙電源
電壓 - 電源，單路/雙路(±)： 12V，±15V
電流 - 電源： 20µA
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 20-LCC（J 形引線）
供應(yīng)商設(shè)備封裝： 20-PLCC（9x9）
包裝： 管件
Document Number: 70063
S11-1350–Rev. K, 04-Jul-11
www.vishay.com
5
Vishay Siliconix
DG428, DG429
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g.
R
DS(on) = RDS(on) MAX – RDS(on) MIN
(
RDS(on) AVE
)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa (for single supply)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V, WR = 0,
RS = 2.4 V, VIN = 2.4 V, 0.8 V
f
Temp.b
Typ.c
A Suffix
- 55°C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
0
12
0
12
V
Drain-Source
On-Resistance
RDS(on)
VD = ± 10 V, VAL = 0.8 V
IS = - 500 A, VAH = 2.4 V
Room
80
150
RDS(on) Match
g
R
DS(on)
0 V < VS < 10 V
IS = - 1 mA
Room
5
%
Source Off Leakage Current
IS(off)
VS = 0 V, 10 V,
VEN = 0 V, VD = 10 V, 0 V
Room
Full
± 0.03
- 0.5
- 50
0.5
50
- 0.5
- 50
0.5
50
nA
Drain Off Leakage Current
ID(off)
VD = 0 V, 10 V
VS = 10 V, 0 V
VEN = 0 V
DG428
Room
Full
± 0.07
- 1
- 100
1
100
- 1
- 100
1
100
DG429
Room
Full
± 0.05
- 1
- 50
1
50
- 1
- 50
1
50
Drain On Leakage Current
ID(on)
VS = VD = 0 V, 10 V
VEN = 2.4 V
VAL= 0.8 V
VAH = 2.4 V
DG428
Room
Full
± 0.07
- 1
- 100
1
100
- 1
- 100
1
100
DG429
Room
Full
± 0.05
- 1
- 50
1
50
- 1
- 50
1
50
Digital Control
Logic Input Current
Input Voltage High
IAH
VA = 2.4 V
Full
1
A
VA = 12 V
Full
1
Logic Input Current
Input Voltage Low
IAL
VEN = 0 V, 2.4 V, VA = 0 V
RS = 0 V, WR = 0 V
Full
- 1
Dynamic Characteristics
Transition Time
tTRANS
S1 = 10 V/ 2 V, S8 = 2 V/ 10 V
See Figure 5
Room
Full
160
280
350
280
350
ns
Break-Before-Make Interval
tOPEN
See Figure 4
Room
Full
40
25
10
25
10
Enable and WriteTurn-On Time
tON(EN,WR)
S1 = 5 V
See Figure 6 and 7
Room
Full
110
300
400
300
400
Enable and Reset Turn-Off Time
tOFF(EN,RS)
S1 = 5 V
See Figure 6 and 8
Room
Full
70
300
400
300
400
Charge Injection
Q
VGEN = 6 V, RGEN = 0
CL = 1 nF, See Figure 9
Room
4
pC
Off Isolation
OIRR
VEN = 0 V, RL = 300
CL = 15 pF, VS = 7 VRMS
f = 100 kHz
Room
- 75
dB
Minimum Input Timing Requirements
Write Pulse Width
tW
See Figure 2
Full
100
ns
AX, EN Data Set Up time
tS
Full
100
AX, EN Data Hold Time
tH
Full
10
Reset Pulse Width
tRS
VS = 5 V, See Figure 3
Full
100
Power Supplies
Positive Supply Current
I+
VEN = 0 V, VA = 0, RS = 5 V
Room
20
100
A
x 100 %
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