參數(shù)資料
型號(hào): DG429
廠商: Intersil Corporation
英文描述: 2 CHANNEL DRIVERS WITH SPST AND DPST FET SWITCHES
中文描述: 2通道驅(qū)動(dòng)器,SPST和DPST能夠FET開關(guān)
文件頁(yè)數(shù): 5/11頁(yè)
文件大小: 131K
代理商: DG429
DG428/429
Vishay Siliconix
Document Number: 70063
S-52433—Rev. J, 06-Sep-99
www.vishay.com
S FaxBack 408-970-5600
5-3
ABSOLUTE MAXIMUM RATINGS
Voltage Referenced to V–
V+
44 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputsa, VS, VD
(V–) –2 V to (V+) +2 V or
. . . . . . . . . . . . . . . . . . . . . . . .
30 mA, whichever occurs first
Current (Any Terminal)
30 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle Max)
100 mA
. . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
(AK Suffix)
–65 to 150
_C
. . . . . . . . . . . . . . . . . .
(DJ, DN Suffix)
–65 to 125
_C
. . . . . . . . . . . . . .
Power Dissipation (Package)b
18-Pin Plastic DIPc
470 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18-Pin CerDIPd
900 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20-Pin PLCCf
800 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28-Pin Widebody SOICf
450 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on SX, DX or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b.
All leads soldered or welded to PC board.
c.
Derate 6.3 mW/
_C above 75_C.
d.
Derate 12 mW/
_C above 75_C.
e.
Derate 10 mW/
_C above 75_C.
f.
Derate 6 mW/
_C above 75_C.
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified
A Suffix
–55 to 125
_C
D Suffix
–40 to 85
_C
Parameter
Symbol
V+ = 15 V, V– = –15 V, WR = 0,
RS = 2.4 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Analog Switch
Analog Signal Rangee
VANALOG
Full
–15
15
–15
15
V
Drain-Source
On-Resistance
rDS(on)
VD = "10 V, VAL = 0.8 V
IS = –1 mA, VAH = 2.4 V
Room
Full
55
100
125
100
125
W
Greatest Change in rDS(on)
Between Channelsg
DrDS(on)
–10 V < VS < 10 V
IS = –1 mA
Room
5
%
Source Off
Leakage Current
IS(off)
VS = "10 V, VD = #10 V
VEN = 0 V
Room
Full
"0.03
–0.5
–50
0.5
50
–0.5
–50
0.5
50
A
Drain Off
Lk
C
t
ID(off)
VD = "10 V
VS = #10 V
DG428
Room
Full
"0.07
–1
–100
1
100
–1
–100
1
100
A
Leakage Current
ID(off)
VS = #10 V
VEN = 0 V
DG429
Room
Full
"0.05
–1
–50
1
50
–1
–50
1
50
nA
Drain On
Lk
C
t
ID(on)
VS = VD = "10 V
VEN = 2.4 V
V0 8 V
DG428
Room
Full
"0.07
–1
–100
1
100
–1
–100
1
100
Leakage Current
ID(on)
EN
VAL = 0.8 V
VAH = 2.4 V
DG429
Room
Full
"0.05
–1
–50
1
50
–1
–50
1
50
Digital Control
Logic Input Current
It V lt
Hi h
IAH
VA = 2.4 V
Full
0.01
1
A
gp
Input Voltage High
IAH
VA = 15 V
Full
0.01
1
mA
Logic Input Current
Input Voltage Low
IAL
VEN = 0 V, 2.4 V, VA = 0 V
RS = 0 V, WR = 0 V
Full
–0.01
–1
mA
Logic Input Capacitance
Cin
f = 1 MHz
Room
8
pF
Dynamic Characteristics
Transition Time
tTRANS
See Figure 5
Room
Full
150
250
300
250
300
Break-Before-Make Interval
tOPEN
See Figure 4
Full
30
10
Enable and Write
Turn-On Time
tON(EN,WR)
See Figures 6 and 7
Room
Full
90
150
225
150
225
ns
Enable and Reset
Turn-Off Time
tOFF(EN,RS)
See Figures 6 and 8
Room
Full
55
150
300
150
300
Charge Injection
Q
VGEN = 0 V, RGEN = 0 W
CL = 1 nF, See Figure 9
Room
1
pC
Off Isolation
OIRR
VEN = 0 V, RL = 300 W, CL = 15 pF
VS = 7 VRMS, f = 100 kHz
Room
–75
dB
Source Off Capacitance
CS(off)
VS = 0 V, VEN = 0 V, f = 1 MHz
Room
11
F
Drain Off Capacitance
CD(off)
V0 V V
0 V
DG428
Room
40
F
Drain Off Capacitance
CD(off)
VD = 0 V, VEN = 0 V
f1 MH
DG429
Room
20
pF
Drain On Capacitance
CD(on)
D
,
EN
f = 1 MHz
DG428
Room
54
Drain On Capacitance
CD(on)
DG429
Room
34
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