參數(shù)資料
型號: DG408883
廠商: Intersil Corporation
英文描述: Single 8-Channel/Differential 4-Channel CMOS Analog Multiplexers
中文描述: 單8-Channel/Differential 4通道CMOS模擬多路復(fù)用器
文件頁數(shù): 2/19頁
文件大小: 222K
代理商: DG408883
DG408BP45
2/19
SURGE RATINGS
Conditions
7.0
0.245 x 10
6
kA
A
2
s
Surge (non-repetitive) on-state current
I
2
t for fusing
10ms half sine. T
j
= 125
o
C
10ms half sine. T
j
=125
o
C
di
T
/dt
Critical rate of rise of on-state current
300
225
V/
μ
s
Max.
Units
Rate of rise of off-state voltage
dV
D
/dt
1000
V/
μ
s
To 66% V
DRM
; V
RG
= -2V, T
j
= 125
o
C
I
TSM
Symbol
Parameter
I
2
t
V
= 3000V, I
T
= 1000A, T
j
= 125
o
C, I
FG
> 30A,
Rise time > 1.5
μ
s
A/
μ
s
To 66% V
DRM
; R
GK
1.5
, T
j
= 125
o
C
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
10
Min.
-
20
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
15
60
-
20
15
-
-
μ
s
100
70
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
μ
s
A/
μ
s
kW
W
A
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.1
-
0.009
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.041
o
C/W
Anode side cooled
o
C/W
0.07
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-
125
15.0
11.0
-40
kN
o
C/W
Clamping force 12.0kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
125
o
C
o
C
-
L
S
Peak stray inductance in snubber circuit
200
nH
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