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參數(shù)資料
| 型號： | DG2714DL-T1-E3 |
| 廠商： | Vishay Siliconix |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC SWITCH SGL SPDT LV SC70-6 |
| 標準包裝： | 1 |
| 功能： | 開關 |
| 電路： | 1 x SPDT - NC/NO |
| 導通狀態(tài)電阻： | 1.2 歐姆 |
| 電壓電源： | 單電源 |
| 電壓 - 電源，單路/雙路(±)： | 1.5 V ~ 3.6 V |
| 電流 - 電源： | 10nA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 6-TSSOP，SC-88，SOT-363 |
| 供應商設備封裝： | SC-70-6 |
| 包裝： | 標準包裝 |
| 其它名稱： | DG2714DL-T1-E3DKR |
www.vishay.com
2
Document Number: 72308
S-70852-Rev. B, 30-Apr-07
Vishay Siliconix
DG2714
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 3.1 mW/°C above 70 °C.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Referenced V+ to GND
- 0.3 to + 4
V
IN, COM, NC, NOa
- 0.3 to (V+ + 0.3)
Continuous Current (NO, NC and COM Pins)
± 200
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 300
Storage Temperature (D Suffix)
- 65 to 150
°C
Power Dissipation (Packages)b
6-Pin SO70c
250
mW
SPECIFICATIONS (V+ = 1.8 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 1.8 V, ± 10 %, VIN = 0.4 or 1.1 V
e
Tempa
Limits
- 40 to 85 °C
Unit
Minb
Typc
Maxb
Analog Switch
Analog Signal Ranged
VNO, VNC
VCOM
Full
0
V+
V
On-Resistance
rON
V+ = 1.8 V, VCOM = 0.2 V/0.9 V
INO, INC = 10 mA
Room
Fulld
1.8
3.0
4.5
Ω
rON Flatness
d
rON
Flatness
V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA
Room
2
rON Match
d
Δr
ON
Room
0.06
Switch Off Leakage Currentf
INO(off)
INC(off)
V+ = 2.2 V
VNO, VNC = 0.2 V/2.0 V, VCOM = 2.0 V/0.2 V
Room
Fulld
- 1
- 10
1
10
nA
ICOM(off)
Room
Fulld
- 1
- 10
1
10
Channel-On Leakage Currentf
ICOM(on)
V+ = 2.2 V, VNO, VNC = VCOM = 0.2 V/2.0 V
Room
Fulld
- 1
- 10
1
10
Digital Control
Input High Voltage
VINH
Full
1.1
V
Input Low Voltage
VINL
Full
0.4
Input Capacitanced
Cin
Full
3.5
pF
Input Currentf
IINL or IINH
VIN = 0 or V+
Full
- 1
1
A
Dynamic Characteristics
Turn-On Timed
tON
VNO or VNC = 1.5 V, RL = 300 Ω, CL = 35 pF
Figures 1 and 2
Room
Fulld
55
75
89
ns
Turn-Off Timed
tOFF
Room
Fulld
19
39
40
Break-Before-Make Timed
td
Room
3
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3
Room
13
pC
Off-Isolationd
OIRR
RL = 50 Ω, CL = 5 pF, f = 1 MHz
Room
- 64
dB
Crosstalkd
XTALK
Room
- 64
NO, NC Off Capacitanced
CNO(off)
CNC(off)
VIN = 0 or V+, f = 1 MHz
Room
32
pF
Channel-On Capacitanced
CON
Room
78
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