
53098HA (KT)/7067AT, TS No.2374-1/2
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number:EN2374
DFH10T
Diffused Junction Type Silicon Diode
1.0A Power Rectifier
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
B
T
0
1
H
F
D
C
T
0
1
H
F
D
E
T
0
1
H
F
D
G
T
0
1
H
F
D
t
U
e
g
e
C
t
e
C
e
p
e
p
a
V
d
e
s
v
e
R
w
r
F
T
n
T
e
e
e
R
g
k
a
a
v
g
S
n
u
J
a
S
e
P
A
VM
R
IO
I
S
F
j
g
T
0
→
→
→
→
0
1
0
→
→
→
→
0
2
0
→
→
→
→
0
4
0
0
6
0
6
5
1
5
1
+
V
A
A
t
e
d
m
e
m
e
e
M
e
y
c
1
,
v
a
w
e
n
z
H
0
5
0
0
0
o
g
o
0
4
–
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
J
T
0
1
H
F
D
L
T
0
1
H
F
D
N
T
0
1
H
F
D
R
T
0
1
H
F
D
t
U
e
g
e
C
t
e
C
e
p
e
p
a
V
d
e
s
v
e
R
w
r
F
T
n
T
e
e
e
R
g
k
a
a
v
g
S
n
u
J
a
S
e
P
A
VM
R
IO
I
S
F
j
g
T
0
→
→
→
→
0
8
0
→
→
→
→
0
0
1
0
→
→
→
→
0
2
1
0
0
5
0
4
2
1
5
1
+
1
V
A
A
C
C
t
e
d
m
e
m
e
e
M
e
y
c
1
,
v
a
w
e
n
z
H
0
5
0
5
0
o
g
o
0
4
–
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
1175
[DFH10T]
Features
· High-speed switching use.
· Plastic molded structure.
· Reverse recovery time trr=0.15
μ
s max (B, C, E, G).
trr=0.3
μ
s max (J, L, N, R).
· Peak reverse voltage:V
RM
=100 to 1500V
· Average rectified current I
O
=1.0A
C:Cathode
A:Anode
C
C
Ta=25C
Ta=25C
Electrical Characteristics
at Ta = 25C
Reverse Recovery Time Test Circuit
Unit (resistance:
, capacitance:F)
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
m
p
x
a
2
5
1
1
3
m
e
g
a
V
d
w
r
F
VF
IF
IF
VR
IF
IF
)
G
R
,
E
N
,
C
,
B
(
A
A
e
A
A
0
=
0
=
A
:
2
=
2
=
V
V
A
μ
μ
μ
)
,
,
h
V
R
V
R
,
c
a
,
,
t
y
v
o
e
C
e
R
e
e
s
v
s
v
e
e
R
R
IR
tr
t
VM
R
1
=
1
=
0
5
e
m
i
c
m
m
)
)
G
R
,
,
E
N
,
C
,
,
B
(
V
V
5
5
s
s
,