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| 型號： | DEMO-HSMS285-0 |
| 英文描述： | 2.45 GHz TAG circuit using the HSMS-2850 zero bias Schottky diode |
| 中文描述： | 2.45 GHz標(biāo)簽電路使用硬件安全模塊- 2850零偏壓肖特基二極管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | DEMO-HSMS285-0 |
2
AT-32063 Absolute Maximum Ratings
[1]
Absolute
Maximum
Symbol
Parameter
Units
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
V
V
V
1.5
11
5.5
32
150
150
mA
mW
°
C
°
C
-65 to 150
Thermal Resistance
[2]
:
θ
jc
= 370
°
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
Mounting Surface
= 25
°
C.
3.
Derate at 2.7 mW/
°
C for T
C
> 94.5
°
C.
4. 150 mW per device.
Electrical Specifications, T
A
= 25
°
C
Symbol
NF
Noise Figure; V
CE
= 2.7 V, I
C
= 5 mA
G
A
Associated Gain; V
CE
= 2.7 V, I
C
= 5 mA
h
FE
Forward Current Transfer Ratio; V
CE
= 2.7 V, I
C
= 5 mA
I
CBO
Collector Cutoff Current; V
CB
= 3 V
I
EBO
Noise Figure; V
EB
= 1 V
Parameters and Test Conditions
Units Min.
dB
dB
—
μ
A
μ
A
Typ. Max.
1.1
[2]
14.5
[2]
f = 0.9 GHz
f = 0.9 GHz
1.4
[2]
12.5
[2]
50
270
0.2
1.5
Notes:
1. All data is per individual transistor.
2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.2 dB;
output loss = 0.3dB.
W = 20
L = 60
W = 10
L = 450
W = 10
L = 100
TEST CIRCUIT
BOARD MATERIAL = 0.047 GETEK (
ε
= 4.3)
DIMENSIONS IN MILS
NOT TO SCALE
50
50
Figure 1. Test circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain,
stability, and a practical synthesizable match.
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