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參數(shù)資料
| 型號(hào)： | DEMO-ATF3X14-33 |
| 英文描述： | Evaluation board for the ATF-3X143 on 900 MHz and 1930-1990 MHz frequencies |
| 中文描述： | 評(píng)估板，亞歐信托基金，3X143對(duì)900兆赫及1930-1990兆赫頻率 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 70K |
| 代理商： | DEMO-ATF3X14-33 |
2
AT-32063 Absolute Maximum Ratings
[1]
Absolute
Maximum
Symbol
Parameter
Units
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
V
V
V
1.5
11
5.5
32
150
150
mA
mW
°
C
°
C
-65 to 150
Thermal Resistance
[2]
:
θ
jc
= 370
°
C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
Mounting Surface
= 25
°
C.
3.
Derate at 2.7 mW/
°
C for T
C
> 94.5
°
C.
4. 150 mW per device.
Electrical Specifications, T
A
= 25
°
C
Symbol
NF
Noise Figure; V
CE
= 2.7 V, I
C
= 5 mA
G
A
Associated Gain; V
CE
= 2.7 V, I
C
= 5 mA
h
FE
Forward Current Transfer Ratio; V
CE
= 2.7 V, I
C
= 5 mA
I
CBO
Collector Cutoff Current; V
CB
= 3 V
I
EBO
Noise Figure; V
EB
= 1 V
Parameters and Test Conditions
Units Min.
dB
dB
—
μ
A
μ
A
Typ. Max.
1.1
[2]
14.5
[2]
f = 0.9 GHz
f = 0.9 GHz
1.4
[2]
12.5
[2]
50
270
0.2
1.5
Notes:
1. All data is per individual transistor.
2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.2 dB;
output loss = 0.3dB.
W = 20
L = 60
W = 10
L = 450
W = 10
L = 100
TEST CIRCUIT
BOARD MATERIAL = 0.047 GETEK (
ε
= 4.3)
DIMENSIONS IN MILS
NOT TO SCALE
50
50
Figure 1. Test circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain,
stability, and a practical synthesizable match.
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