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參數(shù)資料
| 型號： | DE150-102N02A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching RF Power MOSFET |
| 中文描述： | N溝道增強模式雪崩額定低Qg和RG高dv / dt的納秒級射頻功率MOSFET開關(guān) |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 77K |
| 代理商： | DE150-102N02A |
DE150-102N02A
RF Power MOSFET
Directed Energy, Inc.
An
IXYS Company
Directed Energy, Inc.
An
IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
102N02A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expan-
sion of the SPICE level 3 MOSFET model. It includes the stray inductive terms
LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term.
The output capacitance, COSS, and reverse transfer capacitance, CRSS are mod-
eled with reversed biased diodes. This provides a varactor type response nec-
essary for a high power device model. The turn on delay and the turn off delay
are adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
*SYM=POWMOSN
.SUBCKT 102N02A 10 20 30
*
TERMINALS: D G S
* 1000 Volt 1.5 Amp 11.0 ohm N-Channel Power MOSFET 10-30-2001
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 4.0
DON 6 2 D1
ROF 5 7 2.0
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 500Pf
RD 4 1 11
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3 KP=.3)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N)
.MODEL D2 D (IS=.5F CJO=100P BV=1000 M=.6 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=150P BV=1000 M=.35 VJ=.6 TT=400N RS=10M)
.ENDS
Doc #9200-0239 Rev 1
2001 Directed Energy, Inc.
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