參數(shù)資料
型號: DDR-EJS-T2
廠商: DOMINANT Opto Technologies Sdn Bhd.
英文描述: LED AlInGaP
中文描述: 發(fā)光二極管鋁銦鎵磷化物
文件頁數(shù): 3/12頁
文件大?。?/td> 770K
代理商: DDR-EJS-T2
15/11/2005 V2.0
3
AlInGaP : DDx-EJS
DOMINANT
Semiconductors
Innovating Illumination
TM
Typ. (V)
Vf @ If = 20mA
Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V.
Electrical Characteristics at Ta=25C
Max. (V)
V
r
@ I
r
= 10uA
Min. (V)
Part Number
DDx-EJ
1.8
2.0
12
Unit
Absolute Maximum Ratings
Maximum Value
DC forward current
Peak pulse current; (tp ≤ 10μs, Duty cycle = 0.1)
Reverse voltage
ESD Thereshold (HBM)
LED juction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
30
1000
12
2
125
-40 … +100
-40 … +100
78
mA
mA
V
kV
C
C
C
mW
Min. (V)
2.6
Vf Bining (Optional)
Forward Voltage (V)
1.55 ... 1.85
Vf @ If = 20mA
01
02
03
04
1.85 ... 2.15
2.15 ... 2.45
2.45 ... 2.65
Forward voltage, Vf is measured with an accuracy of ± 0.1V.
Please consult sales and marketing for special part number to incorporate Vf binning.
相關PDF資料
PDF描述
DDR-EJS-TU1-1 LED AlInGaP
DDR-EJS-U1 LED AlInGaP
DDS-EJS-S2 LED AlInGaP
DDS-EJS-S2T-1 LED AlInGaP
DDS-EJS-T1 LED AlInGaP
相關代理商/技術參數(shù)
參數(shù)描述
DDR-EJS-TU1-1 制造商:DOMINANT 制造商全稱:DOMINANT Semiconductors 功能描述:LED AlInGaP
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