參數(shù)資料
型號(hào)： DDC114EK
廠商： Diodes Inc.
英文描述： NPN PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR
中文描述： npn型預(yù)偏置信號(hào)小的SOT - 26表面貼裝晶體管雙
文件頁數(shù)： 2/30頁
文件大小： 389K
代理商： DDC114EK
""#
SBAS255A JUNE 2004 REVISED NOVEMBER 2004
www.ti.com
2
PACKAGE/ORDERING INFORMATION
For the most current package and ordering information,
see the Package Option Addendum located at the end of
this data sheet.
ABSOLUTE MAXIMUM RATINGS
(1)
Analog Input Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AVDD to DVDD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AVDD to AGND
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DVDD to DGND
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AGND to DGND
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VREF Input to AGND
. . . . . . . . . . . . . . . . . .
Analog Input to AGND
. . . . . . . . . . . . . . . . . . . . . . .
Digital Input Voltage to DGND
Digital Output Voltage to DGND
Operating Temperature
. . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature (TJ)
. . . . . . . . . . . . . . . . . . . . . . . . . . .
(1)Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods
may degrade device reliability. These are stress ratings only, and
functional operation of the device at these or any other conditions
beyond those specified is not implied.
750
μ
A
0.3V to +6V
0.3V to +6V
0.3V to +6V
±
0.2V
2.0V to AVDD + 0.3V
0.3V to +0.7V
0.3V to DVDD + 0.3V
0.3V to AVDD + 0.3V
40
°
C to +85
°
C
60
°
C to +150
°
C
. . . . . . . . . . .
. . . . . . . . .
+150
°
C
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DDC114EK-7 制造商:Diodes Incorporated 功能描述:TRANS DGTL BJT NPN 100MA 6PIN SOT-26 - Tape and Reel
DDC114EK-7-F 制造商:Diodes Incorporated 功能描述:PREBIASED TRANSISTOR SOT-26 R1=R2 NPN 300MW 10KOHMS 10KOHMS - Tape and Reel
DDC114EU 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
DDC114EU-7 功能描述:開關(guān)晶體管 - 偏壓電阻器 DUAL NPN 200mW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
DDC114EU-7-F 功能描述:開關(guān)晶體管 - 偏壓電阻器 DUAL NPN 200mW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
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