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參數(shù)資料
| 型號(hào)： | DDA-EJS-T2 |
| 廠商： | DOMINANT Opto Technologies Sdn Bhd. |
| 英文描述： | LED AlInGaP |
| 中文描述： | 發(fā)光二極管鋁銦鎵磷化物 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 770K |
| 代理商： | DDA-EJS-T2 |
15/11/2005 V2.0
3
AlInGaP : DDx-EJS
DOMINANT
Semiconductors
Innovating Illumination
TM
Typ. (V)
Vf @ If = 20mA
Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V.
Electrical Characteristics at Ta=25C
Max. (V)
V
r
@ I
r
= 10uA
Min. (V)
Part Number
DDx-EJ
1.8
2.0
12
Unit
Absolute Maximum Ratings
Maximum Value
DC forward current
Peak pulse current; (tp ≤ 10μs, Duty cycle = 0.1)
Reverse voltage
ESD Thereshold (HBM)
LED juction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
30
1000
12
2
125
-40 … +100
-40 … +100
78
mA
mA
V
kV
C
C
C
mW
Min. (V)
2.6
Vf Bining (Optional)
Forward Voltage (V)
1.55 ... 1.85
Vf @ If = 20mA
01
02
03
04
1.85 ... 2.15
2.15 ... 2.45
2.45 ... 2.65
Forward voltage, Vf is measured with an accuracy of ± 0.1V.
Please consult sales and marketing for special part number to incorporate Vf binning.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DDA-EJS-T2U-1 | LED AlInGaP |
| DDA-EJS-U1 | LED AlInGaP |
| DDA-EJS-U2 | LED AlInGaP |
| DDR-EJS-T1 | LED AlInGaP |
| DDR-EJS-T2 | LED AlInGaP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DDA-EJS-T2U-1 | 制造商:DOMINANT 制造商全稱:DOMINANT Semiconductors 功能描述:LED AlInGaP |
| DDA-EJS-U1 | 制造商:DOMINANT 制造商全稱:DOMINANT Semiconductors 功能描述:LED AlInGaP |
| DDA-EJS-U2 | 制造商:DOMINANT 制造商全稱:DOMINANT Semiconductors 功能描述:LED AlInGaP |
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| D-DAMAA1-HAB7XBC-AE0400X-1 | 制造商:Circuit Breaker Ind 功能描述: |
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