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DD2520/S & DD2524/S
1 of 2 2006 Won-Top Electronics
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DD2520/S & DD2524/S
25A GLASS PASSIVATED AVALANCHE DISH TYPE PRESS-FIT DIODE
Features
!
Glass Passivated Die Construction
!
Low Leakage
!
Low Cost C
Anode
+
!
High Surge Current Capability
!
Low Forward
!
C-Band Terminal Construction
D
Mechanical Data
B
!
Case: 8.4mm or 9.5mm Dish Type Press-Fit
with Silicon Rubber Sealed on Top A
!
Terminals: Contact Areas Readily Solderable
!
Polarity: Cathode to Case (Reverse Units Are
Available Upon Request and Are Designated
By A “R” Suffix, i.e. DD2520R or DD2520SR)
!
Polarity: White Color Equals Standard,
Black Color Equals Reverse Polarity
!
Mounting Position: Any
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 2
“S” Suffix Designates 8.4mm Dish
No Suffix Designates 9.5mm Dish
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
DD2520/S
DD2524/S
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
16
20
V
Average Rectified Output Current @T
C
= 150°C
I
O
25
A
Breakdown Voltage Min. @I
R
= 100mA
Breakdown Voltage Max. @I
R
= 100mA
V
BR
20
26
24
32
V
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
300
A
Forward Voltage @I
F
= 25A
V
FM
1.0
V
Peak Reverse Current
At Rated DC Blocking Voltage @T
A
= 25°C
I
RM
200
nA
Typical Junction Capacitance (Note 1)
C
j
300
pF
Typical Thermal Resistance (Note 2)
R
JC
1.0
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +175
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance: Junction to case, single side cooled.
WTE
POWER SEMICONDUCTORS
8.4mm Dish
Min
8.25
2.00
9.5mm Dish
Min
9.30
2.0
Dim
A
B
C
D
Max
8.45
2.40
1.50 Typical
—
Max
9.70
2.40
17.50
17.50
—
All Dimensions in mm