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參數(shù)資料
| 型號： | DD250HB120 |
| 廠商： | Sanrex Corporation |
| 英文描述： | DIODE MODULE (F.R.D.) |
| 中文描述： | 二極管模塊（賽FRD） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 94K |
| 代理商： | DD250HB120 |
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DD250GB
DIODE MODULE
F.R.D.
Power Diode Module
DD250GB
series are designed for various rectifier circuits.
DD250GB
has two diode chips connected in series in a package and the mounting base is
electrically isolated from elements for simple heatsink construction. Wide voltage rating
up to 800V is available for various input voltage.
Isolated mounting base
Two elements in a package for simple
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Bettery chargers, DC motor drives
single and three phase
bridge
Maximum Ratings
Tj
25
unless otherwise specified
Symbol
Symbol
Ratings
DD250GB40
400
480
Unit
V
RRM
V
RSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
DD250GB80
800
960
V
V
Symbol
I
F AV
I
F RMS
I
FSM
I
2
t
Tj
Tstg
V
ISO
Symbol
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I
2
t
Operating J unction Temperature
Storage Temperature
Isolation Breakdown Voltage R.M.S.
Conditions
Ratings
250
390
5000
/
5500
125000
40 to
40 to
2500
2.7
11
510
Unit
A
A
A
A
2
S
Single phase, half wave, 180
Single phase, half wave, 180
1
2
cycle, 50/60H
Z
, peak value, non-repetitive
Value for one cycle of surge current
conduction, Tc
conduction, Tc
98
98
150
125
Mounting
Torque
A.C. 1 minute
Recommended Value 1.5-2.5
Recommended Value 8.8-10
Typical Value
V
Mounting
M5
Terminal
M8
Mass
15-25
90-105
28
115
N m
f
B
g
Unit
Electrical Characteristics
Symbol
I
RRM
V
FM
Symbol
Repetitive Peak Reverse Current
Forward Voltage Drop
Thermal Impedance
Conditions
T
j
T
j
J unction to case
150
25
at V
RRM
, I
FM
=750A, Inst. measurement
Unit
mA
V
/
W
Rth j-c
Ratings
Typ.
Min.
Max.
50
1.45
0.14
UL;E76102 M
SanRex
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