參數(shù)資料
型號(hào)： DCX68-13
廠商： DIODES INC
元件分類： 小信號(hào)晶體管
中文描述： 1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, PLASTIC PACKAGE-3
文件頁數(shù)： 1/4頁
文件大小： 187K
代理商： DCX68-13
DCX68/-25
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DCX69)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
NEW
PRODUCT
SOT89-3L
3
1
2,4
COLLECTOR
EMITTER
BASE
4
3
2
1
C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
25
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
1.0
A
Peak Pulse Current
ICM
2.0
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 3) @ TA = 25°C
PD
1
W
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
RθJA
125
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
25
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
20
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
V
IE = 100μA, IC = 0
Collector-Base Cutoff Current
ICBO
0.1
10
μA
VCB = 25V, IE = 0
VCB = 25V, IE = 0, TA = 150°C
Emitter-Base Cutoff Current
IEBO
10
μA
VEB = 5.0V, IC = 0
ON CHARACTERISTICS (Note 4)
DCX68, DCX68-25
50
60
VCE = 10V, IC = 5.0mA
VCE = 1.0V, IC = 1.0A
DCX68
85
375
VCE = 1.0V, IC = 500mA
DC Current Gain
DCX68-25
hFE
160
375
VCE = 1.0V, IC = 500mA
Collector-Emitter Saturation Voltage
VCE(SAT)
0.5
V
IC = 1.0A, IB = 100mA
Base-Emitter Turn-On Voltage
VBE(ON)
1.0
V
IC = 1.0A, VCE = 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
330
MHz
VCE = 5.0V, IC = 100mA,
f = 100MHz
Output Capacitance
Cobo
25
pF
VCB = 10V, IE = 0, f = 1MHz
Notes:
1.
No purposefully added lead.
2.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4.
Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
DS31163 Rev. 4 - 2
1 of 4
www.diodes.com
DCX68/-25
Diodes Incorporated
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DCX68-25-13 功能描述:兩極晶體管 - BJT 1W 20V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DCX69 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SURFACE MOUNT TRANSISTOR
DCX69-13 功能描述:兩極晶體管 - BJT 1000W -20Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DCX69-16-13 功能描述:兩極晶體管 - BJT 1000W -20Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DCX69-25-13 功能描述:兩極晶體管 - BJT 1W -20V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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