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參數(shù)資料
| 型號： | DCX4710H_1 |
| 廠商： | Diodes Inc. |
| 英文描述： | 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS |
| 中文描述： | 100mA的雙互補預(yù)偏置三極管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 195K |
| 代理商： | DCX4710H_1 |
DCX4710H
100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
General Description
1
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DS30871 Rev. 6 - 2
1 of 7
www.diodes.com
DCX4710H
Diodes Incorporated
DCX4710H is best suited for applications where the load
needs to be turned on and off using micro-controllers,
comparators or other control circuits, particularly at a point of
load. It features a discrete pre-biased PNP transistor which
can support continuous maximum current of 100 mA. It also
contains a pre-biased NPN transistor which can be used as a
control and can be biased using a higher supply. The
component devices can be used as a part of circuit or as
stand alone discrete devices.
Features
Mechanical Data
Built in Biasing Resistors
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT-563
Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Fig. 2
Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 7
Ordering Information: See Page 7
Weight: 0.005 grams (approximate)
SOT-563
Schematic and Pin Configuration
Reference
Device Type
R1 (NOM)
R2 (NOM)
R3 (NOM)
R4 (NOM)
Q1
PNP
10K
Ω
47K
Ω
Q2
NPN
10K
Ω
10K
Ω
Maximum Ratings: Total Device
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Output Current
I
out
100
mA
Power Dissipation (Note 3)
P
d
150
mW
Power Derating Factor above 45°C
P
der
1.43
mW/°C
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of PNP transistor) @ T
A
= 25°C
Notes:
1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
P
d
-55 to +150
°C
R
θ
JA
833
°C/W
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| DCX4710H-7 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 PREBIASED TRANSISTOR SOT-563 150MW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DCX51 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SURFACE MOUNT TRANSISTOR |
| DCX51-13 | 功能描述:兩極晶體管 - BJT 1000W -45Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| DCX51-16-13 | 功能描述:兩極晶體管 - BJT 1000W -45Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| DCX52 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SURFACE MOUNT TRANSISTOR |
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