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參數(shù)資料
| 型號(hào)： | DCR820SG65 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 608 A, 6500 V, SCR |
| 封裝： | G, 4 PIN |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 187K |
| 代理商： | DCR820SG65 |
7/10
DCR820SG
www.dynexsemi.com
Fig.8 Gate characteristics
Fig.9 Gate characteristics
Gate trigger current, I
GT
- (A)
G
G
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
j
= 125
C
T
j
= 25
C
T
j
= -40
C
Preferred gate drive area
Upper limit
Lower limit
Pulse Width
μ
s
100
200
500
1000
10000
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Frequency Hz
Table gives pulse power P
GM
in Watts
Gate trigger current, I
GT
- (A)
Upper Limit
Lower Limit
5W
10W
20W
50W
100W
G
G
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
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