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參數(shù)資料
| 型號(hào)： | DCR820SG63 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 608 A, 6300 V, SCR |
| 封裝： | G, 4 PIN |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 187K |
| 代理商： | DCR820SG63 |
3/10
DCR820SG
www.dynexsemi.com
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
180 x 10
3
A
2
s
6.0
kA
115 x 10
3
A
2
s
4.8
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.064
Anode dc
Clamping force 12.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.008
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
10.8
13.2
kN
–55
150
o
C
-
On-state (conducting)
-
135
o
C
-
0.016
o
C/W
o
C/W
Cathode dc
-
0.064
o
C/W
Double side cooled
-
0.032
o
C/W
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