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參數(shù)資料
| 型號： | DCR820SG61 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 608 A, 6100 V, SCR |
| 封裝： | G, 4 PIN |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 187K |
| 代理商： | DCR820SG61 |
8/10
www.dynexsemi.com
DCR820SG
Fig.10 Stored charge
Fig.12 Surge (non-repetitive) on-state current vs time
(with 50% V
RRM
@ T
case
= 125C)
Fig.13 Maximum (limit) transient thermal impedance
- junction to case
Fig.11 Reverse recovery current
10000
1000
100
T
R
μ
C
0.1
1.0
10
Rate of decay of on-state current, dI/dt - (A/
μ
s)
100
I
RR
Q
RA3
I
T
dI/dt
Max
Min
Conditions:
T
j
= 125
C
I
T
= 320A
V
R
= 100V
25% I
RR
1000
100
10
P
R
0.1
1.0
10
Rate of decay of on-state current, dI/dt - (A/
μ
s)
100
Max
Min
Conditions:
T
j
= 125
C
I
T
= 320A
V
R
= 100V
1
10
5
10
1
50
Cycles at 50Hz
Duration
ms
0
5
7.5
10
P
12.5
0
0.05
I
2
t
2
s
6
)
0.1
2.5
I
2
t
0.1
0.01
0.001
T
t
C
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side
cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case
C/W
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
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