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參數(shù)資料
| 型號(hào)： | DCR818SG46 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 830 A, 4600 V, SCR |
| 封裝： | G, 4 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 109K |
| 代理商： | DCR818SG46 |
6/8
www.dynexsemi.com
DCR818SG
Fig.6 Transient thermal impedance - junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% V
RRM
at T
case
= 125C)
0.1
0.01
0.001
T
C
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case
C/W
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
10.0
P
7.5
5.0
2.5
0
1
10
1
2 3 45
50
ms
Cycles at 50Hz
Duration
50
150
I
2
t
2
s
3
)
I
2
t
I
2
t =
2
x t
2
12.5
10
20 30
100
200
0.1
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/μs)
10000
1000
100
T
S
I
T
= 1000A
V
R
= 100V
Conditions:
T
j
= 125
C
Q
S
is total integral stored charge
I
RM
Q
S
t
p
= 1ms
I
T
dI/dt
10
I
FGM
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
G
G
Upperlmt99%
Lowe imt1%
T
j
= 125
C
T
j
= 25
C
T
j
= -40
C
V
GD
2W
4W
1W
2W
5W
10W
10W
Table gives pulse power P
GM
in Watts
Pulse width
μs
100
200
500
1ms
10ms
-
20
Frequency Hz
100
150
150
150
100
150
50
150
150
150
400
150
125
100
25
-
Fig.4 Stored charge
Fig.5 Gate characteristics
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| DCR818SG4646 | 制造商:n/a 功能描述:Power SCR 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DCR818SG47 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Phase Control Thyristor |
| DCR818SG4747 | 制造商:n/a 功能描述:Power SCR |
| DCR818SG48 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Phase Control Thyristor |
| DCR818SG4848 | 制造商:n/a 功能描述:Power SCR |
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