參數(shù)資料
型號: DCR818SG44
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 晶閘管
英文描述: Phase Control Thyristor
中文描述: 830 A, 4400 V, SCR
封裝: G, 4 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 109K
代理商: DCR818SG44
4/8
www.dynexsemi.com
DCR818SG
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
See table, fig.5
P
G(AV)
Mean gate power
3.0
V
300
mA
0.25
V
30
V
0.25
V
5
V
10
A
150
W
5
W
Max.
Units
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
to1000A
Gate source 20V, 10
t
r
0.5
μ
s. T
j
= 125
o
C.
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% V
DRM
T
j
= 125
o
C.
Typ.
Max.
Units
-
50
mA
-
1000
V/
μ
s
Repetitive 50Hz
-
75
A/
μ
s
Non-repetitive
-
150
A/
μ
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
I
L
Latching current
T
j
= 25
o
C, V
D
= 5V, Gate source = 20V, 10
I
H
Holding current
T
j
= 25
o
C, R
g-k
=
1.4
-
V
-
1.7
m
-
1.7
μ
s
V
= 67% V
DRM
, Gate source 30V, 15
Rise time 0.5
μ
s, T
j
= 25
o
C
100
1000
mA
60
500
mA
I
T
= 1000A, t
= 1ms, T
= 125C,
V
RM
= 100V, dI
RR
/dt = 10A/
μ
s,
dV
DR
/dt = 20V/
μ
s to 3000V
μ
s
-
450
Turn-off time
t
q
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