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參數(shù)資料
| 型號(hào)： | DCR803SG18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 1641 A, 1800 V, SCR |
| 封裝： | G, 4 PIN |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大小： | 111K |
| 代理商： | DCR803SG18 |
6/8
www.dynexsemi.com
DCR803SG
Fig.6 Maximum (limit) transient thermal impedance -
junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% V
RRM
at T
case
125C)
0.1
0.01
0.001
T
C
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side cooled
Conduction
Effective thermal resistance
Junction to case
C/W
Double side
0.032
0.034
0.044
0.057
Anode side
0.064
0.066
0.076
0.089
d.c.
Halfwave
3 phase 120
6 phase 60
20
15
10
5
0
P
1
10
1
2
3 45
50
ms
Cycles at 50Hz
Duration
400
500
I
2
t
2
s
3
)
I
2
t
I
2
t =
2
x t
2
600
25
10
20 30
Fig.4 Stored charge
Fig.5 Gate characteristics
0.1
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/μs)
10000
1000
100
T
S
Conditions:
Q
is total integral stored charge
T
j
= 125
C
I
T
= 1250A
I
= 500A
Max. value
I
T
= 1250A
I
T
= 500A
Min. value
I
RR
Q
S
I
T
dI/dt
10
I
FGM
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
G
G
Region of
certain triggering
T
j
C
T
j
C
T
j
C
V
GD
Table gives pulse power P
GM
in Watts
Pulse width
μs
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
-
100
150
150
150
100
400
150
125
100
25
-
10W
5W
2W
1W
5W
Upper limit 99%
Lower limit 99%
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