參數(shù)資料
型號(hào)： DCR803SG17
廠商： DYNEX SEMICONDUCTOR LTD
元件分類： 晶閘管
英文描述： Phase Control Thyristor
中文描述： 1641 A, 1700 V, SCR
封裝： G, 4 PIN
文件頁數(shù)： 4/8頁
文件大?。?/td> 111K
代理商： DCR803SG17
4/8
www.dynexsemi.com
DCR803SG
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
Typ.
Max.
Units
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
See table, gate characteristics curve
P
G(AV)
Mean gate power
1.0
3.5
V
-
200
mA
-
0.25
V
-
30
V
-
0.25
V
-
5
V
-
30
A
-
150
W
-
10
W
Typ.
Max.
Units
I
GD
Gate non-trigger current
At V
DRM
T
case
= 125
o
C
-
-
A
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
to 1500A
Gate source 1.5A
t
r
= 0.5
μ
s, T
j
= 125
o
C
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% V
DRM
T
j
= 125
o
C. Gate open circuit.
-
50
mA
-
1000
V/
μ
s
Repetitive 50Hz
-
500
A/
μ
s
Non-repetitive
-
1000
A/
μ
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
0.85
-
V
-
0.38
m
-
1.5
μ
s
V
= 67% V
DRM
, Gate source 30V, 15
t
r
= 0.5
μ
s, T
j
o
C
I
T
= 1000A, t
p
= 1ms, T
j
= 125C,
V
R
= 50V, dI
RR
/dt = 20A/
μ
s,
V
DR
= 67% V
DRM
, dV
DR
/dt = 20V/
μ
s linear
μ
s
300
200
Turn-off time
t
q
I
L
Latching current
T
j
= 25
o
C, V
D
= 5V
I
H
Holding current
T
j
= 25
o
C, V
D
= 5V
350
1000
mA
40
100
mA
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