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參數(shù)資料
| 型號： | DCR1675SZ |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 相位控制晶閘管 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 109K |
| 代理商： | DCR1675SZ |
6/8
www.dynexsemi.com
DCR1675SZ
Fig.6 Transient thermal impedance - junction to case
Fig.4 Stored charge
Fig.5 Gate characteristics
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% V
RRM
at T
case
= 125C)
100
10
1
0.1
0.001
0.1
0.01
1.0
10
V
FGM
Lower Limit 1%
Upper Lmt 99%
T
j
= 25
C
V
GD
G
G
Gate trigger current, I
GT
- (A)
100W
50W
20W
10W
I
GD
I
FGM
Table gives pulse power P
GM
in Watts
Pulse Width
μs
100
200
500
1ms
10ms
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Frequency Hz
10
1
0.1
0.01
0.001
Time - (s)
0.1
0.01
0.001
0.0001
T
C
Double side cooled
Anode side cooled
100
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case
C/W
Double side
0.0065
0.0072
0.0073
0.0076
Anode side
0.0130
0.0137
0.0138
0.0141
0.1
1.0
10
100
Rate of decay of on-state current dI/dt - (A/μs)
100000
10000
1000
T
S
T
j
= 125
C
I
T
= 600A
I
RM
Q
S
t
p
= 3ms
I
T
dI/dt
100
75
50
25
0
P
1
10
1
2 3 45
50
ms
Cycles at 50Hz
Duration
0
7.5
I
2
t
2
s
6
)
I
2
t
I
2
t =
2
x t
2
125
10
20 30
5.0
2.5
10.0
12.5
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| DCR1675SZ3939 | 制造商:n/a 功能描述:Power SCR |
| DCR1675SZ4040 | 制造商:n/a 功能描述:Power SCR |
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