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參數(shù)資料
| 型號： | DCR1660Y |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Phase Control Thyristor Target Information |
| 中文描述： | 相位控制晶閘管目標信息 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 139K |
| 代理商： | DCR1660Y |
DCR1660Y
4/9
www.dynexsemi.com
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 4
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.0
300
0.25
30
0.25
5
10
150
5
Units
V
mA
V
V
V
V
A
W
W
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Test Conditions
Double side cooled
DC
Single side cooled
Anode DC
Cathode DC
Clamping force 50kN
Double side
(with mounting compound)
Single side
On-state (conducting)
Reverse (blocking)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
F
m
Units
CW
CW
CW
CW
CW
C
C
C
kN
Max.
0.0095
0.019
0.019
0.002
0.004
135
125
125
55.0
Min.
-
-
-
-
-
-
-
–55
45.0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DCR1660Y60 | 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DCR1660Y61 | 制造商:n/a 功能描述:Power Semiconductor |
| DCR1660Y62 | 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DCR1660Y63 | 制造商:n/a 功能描述:Power Semiconductor |
| DCR1660Y64 | 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
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