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參數(shù)資料
| 型號： | DCR1660Y63 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Phase Control Thyristor Target Information |
| 中文描述： | 2600 A, 6300 V, SCR |
| 封裝： | Y, 4 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 139K |
| 代理商： | DCR1660Y63 |
DCR1660Y
3/9
www.dynexsemi.com
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Test Conditions
10ms half sine, T
case
= 125C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine, T
case
= 125C
V
R
= 0
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
SURGE RATINGS
Units
kA
A
2
s
kA
A
2
s
Max.
22.0
2.4 x 10
6
28.0
3.92 x 10
6
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Turn-off time
Latching current
Holding current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125C
To 67% V
DRM
, T
j
= 125C
From 67% V
DRM
,
Repetitive 50Hz
Gate source 30V, 15
,
Non-repetitive
t
r
≤
0.5
μ
s, T
j
= 125C
At T
vj
= 125C
At T
vj
= 125C
V
D
= 67% V
DRM
, gate source 30V, 15
t
r
= 0.5
μ
s, T
j
= 25C
I
T
= 1000A, t
p
= 1ms, T
j
=125C,
V
R
= 100V, dI
RR
/dt = 10A/
μ
s,
V
DR
= 67% V
DRM
,
dV
DR
/dt = 25V/
μ
s linear
T
j
= 25C, V
D
= 10V
T
j
= 25C, V
G–K
=
∞
Symbol
I
RRM
/I
RRM
dV/dt
dI/dt
V
T(TO)
r
T
t
gd
t
q
I
L
I
H
DYNAMIC CHARACTERISTICS
Units
mA
V/
μ
s
A/
μ
s
A/
μ
s
V
m
μ
s
μ
s
mA
mA
Max.
300
1000
150
300
1.2
0.61
1.5
-
600
200
Min.
-
-
-
-
-
-
0.5
1500
-
-
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DCR1660Y64 | 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DCR1660Y65 | 制造商:n/a 功能描述:Power Semiconductor |
| DCR1673SA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Phase Control Thyristors (SCR) - Disc / Puk Devices |
| DCR1673SA24 | 制造商:n/a 功能描述:Power Semiconductor |
| DCR1673SA25 | 制造商:n/a 功能描述:Power Semiconductor |
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