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參數(shù)資料
| 型號： | DCR1660Y62 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | T1/E1 Transformer |
| 中文描述： | 2600 A, 6200 V, SCR |
| 封裝： | Y, 4 PIN |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 139K |
| 代理商： | DCR1660Y62 |
DCR1660Y
7/9
www.dynexsemi.com
Fig.6 Stored charge
Fig.7 Maximum (limit) transient thermal impedance -
junction to case (C/W)
Fig.8 Sub-cycle surge currents
Fig.9 Multi-cycle surge currents
10000
1000
100
T
R
0.1
1.0
10
Rate of decay of on-state current, dI/dt - (A/μs)
100
Max
Min
Conditions:
T
j
= 125
C
I
T
= 550A
V
R
= 100V
I
RR
Q
RA3
I
T
dI/dt
25% I
RR
10
1
0.1
0.01
0.001
Time - (s)
0.1
0.01
0.001
0.0001
T
C
Double side cooled
Anode side cooled
100
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case
C/W
Double side
0.0095
0.0105
0.0112
0.0139
Anode side
0.019
0.020
0.0207
0.0234
0
10
20
30
40
50
60
70
80
90
P
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
1
10
Pulse length, half sine wave - (ms)
9
8
7
6
5
4
3
2
I
2
t
2
s
6
)
I
TSM
(V
R
= 0)
I
TSM
(V
R
= 50% V
RRM
)
I
2
t (V
R
= 0)
I
2
t (V
R
= 50% V
RRM
)
0
5
10
15
20
25
30
0
10
20
30
40
50
60
Number of cycles @ 50Hz
P
Surge current (V
R
= 0)
Surge current (V
R
= 50% V
RRM
)
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