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參數(shù)資料
| 型號： | DCR1594SW |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 相位控制晶閘管 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 179K |
| 代理商： | DCR1594SW |
DCR1594SW
5/10
www.dynexsemi.com
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 8 and 9
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
4
400
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Maximum (limit) on-state characteristics
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.
√
I
T
I
T
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous on-state voltage, V
T
- (V)
0
2000
4000
6000
8000
10000
T
j
= 125
C
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
500
1000
1500
2000
2500
3000
3500
4000
I
T
Instantaneous on-state voltage, V
T
- (V)
T
j
= 125
C
Where
A = 1.152158
B =
–
0.08401428
C = 3.351054x10
–
5
D = 0.01199439
these values are valid for T
j
= 125
C for I
T
500A to 10000A
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