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參數(shù)資料
| 型號(hào)： | DCR1574SV |
| 英文描述： | Phase Control Thyristors (SCR) - Disc / Puk Devices |
| 中文描述： | 相位控制晶閘管（可控硅） -光盤(pán)/北辰設(shè)備 |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 297K |
| 代理商： | DCR1574SV |
4/11
www.dynexsemi.com
DCR1574SY / DCR1574SV
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
Max.
Units
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
to 1000A
Gate source 20V, 10
t
r
≤
0.5
μ
s, T
j
= 125
o
C
dV/dt
Maximum linear rate of rise of off-state voltage To 67% V
DRM
T
j
= 125
o
C.
300
mA
1000
V/
μ
s
Repetitive 50Hz
250
A/
μ
s
Non-repetitive
500
A/
μ
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
0.883
V
0.11
m
2
μ
s
V
D
= 67% V
DRM
, Gate source 30V, 15
,
t
r
≤
0.5
μ
s, T
j
o
C
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
See figs. 7 and 8, gate characteristics table
P
G(AV)
Mean gate power
3.0
V
300
mA
0.25
V
30
V
0.25
V
5
V
30
A
150
W
10
W
Max.
Units
I
T
= 4000A, t
= 3ms, T
= 125C,
V
RM
= 200V, dI
RR
/dt = 6A/
μ
s,
V
DR
= 67% V
DRM
, dV
DR
/dt = 20V/
μ
s linear
μ
s
400
Turn-off time
t
q
I
L
Latching current
T
j
= 25
o
C, V
D
= 5V
I
H
Holding current
T
j
= 25
o
C, R
g - k
=
∞
1000
mA
300
mA
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| DCR1574SV1919 | 制造商:n/a 功能描述:Power SCR |
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