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參數(shù)資料
| 型號： | DCR1475SY29 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 4406 A, 2900 V, SCR |
| 封裝： | Y, 4 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 121K |
| 代理商： | DCR1475SY29 |
6/9
www.dynexsemi.com
DCR1475SY
Fig.6 Transient thermal impedance - junction to case
Fig.4 Stored charge
Fig.5 Gate characteristics
10
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
G
G
100W
50W
20W
10W
5W
2W
T
j
C
T
j
C
T
j
C
Upper limit 99%
Lower limit 1%
V
FGM
Pulse width
μs
100
200
500
1ms
10ms
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Pulse frequency Hz
Table gives pulse power P
GM
in Watts
Fig.6 Transient thermal impedance - junction to heatsink
1
10
100
Rate of decay of on-state current dI/dt - (A/μs)
10000
1000
100
S
S
Q
R
max
Q
R
min
I
RR
max
I
RR
min
1000
100
10
P
R
Conditions: I
T
= 1000A, T
= 125
C,
V
R
= 100V, t
p
= 1ms forward pulse
I
RR
Q
S
I
TM
dI/dt
0.001
0.01
0.1
1.0
10
100
Time - (s)
0.1000
0.0100
0.0010
0.0001
T
t
C
Anode side cooled
Double side cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective Thermal Resistance
Junction to case -
C/W
Double
Sided
0.0095
0.0105
0.0112
0.0139
Anode
Sided
0.0190
0.0200
0.0207
0.0234
0.001
0.01
0.1
1.0
10
100
Time - (s)
0.1000
0.0100
0.0010
0.0001
T
t
C
Single side cooled
Double side cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective Thermal Resistance
Junction to heatsink -
C/W
Double
Sided
0.0115
0.0125
0.0132
0.0159
Single
Sided
0.0230
0.0240
0.0247
0.0274
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DCR1475SY30 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Phase Control Thyristor |
| DCR1476/30 | 制造商:n/a 功能描述:Power SCR |
| DCR1476SV | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Phase Control Thyristors (SCR) - Disc / Puk Devices |
| DCR1476SV2323 | 制造商:n/a 功能描述:Power SCR |
| DCR1476SV2424 | 制造商:n/a 功能描述:Power SCR |
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