參數(shù)資料
型號: DCR1475SV
英文描述: Phase Control Thyristors (SCR) - Disc / Puk Devices
中文描述: 相位控制晶閘管(可控硅) -光盤/北辰設(shè)備
文件頁數(shù): 4/9頁
文件大?。?/td> 105K
代理商: DCR1475SV
DCR1473SY / DCR1473SV
4/9
www.dynexsemi.com
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
to 1000A
Gate source 20V, 10
t
r
= 0.5
μ
s to 1A, T
j
= 125
o
C
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% V
DRM
T
j
= 125
o
C, gate open circuit
Max.
Units
250
mA
1000
V/
μ
s
Repetitive 50Hz
250
A/
μ
s
Non-repetitive
500
A/
μ
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
0.824
V
0.066
m
2.0
μ
s
V
= 67% V
DRM
, Gate source 30V, 15
t
r
= 0.5
μ
s, T
j
o
C
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
G(PK)
Peak gate power
See Gate Characteristics curve/table
P
G(AV)
Mean gate power
4.0
V
400
mA
0.25
V
30
V
0.25
V
5
V
30
A
150
W
10
W
Max.
Units
相關(guān)PDF資料
PDF描述
DCR1476SV Phase Control Thyristors (SCR) - Disc / Puk Devices
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DCR1474SY14 Phase Control Thyristor
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