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參數(shù)資料
| 型號(hào)： | DCR1374SBA |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 相位控制晶閘管 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 109K |
| 代理商： | DCR1374SBA |
DCR1374SBA
5/9
www.dynexsemi.com
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3
350
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Power dissipation
0.5
1.0
1.5
2.0
Instantaneous on-state voltage, V
T
- (V)
0
2000
4000
6000
1000
3000
5000
7000
8000
I
T
Measured under pulse conditions
T
j
= 125
C
0
1000
Mean on-state current I
T(AV)
- (A)
2000
3000
4000
0
1000
2000
3000
4000
5000
M
d.c.
Half wave
3 phase
6 phase
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.
√
I
T
Where
A = 0.4846543
B = 8.508026 x 10
–
5
C = 0.05408984
D = 1.863019 x 10
–
3
these values are valid for T
j
= 125
C for I
T
500A to 8000A
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| DCR1374SBA0101 | 制造商:n/a 功能描述:Power SCR |
| DCR1374SBA0202 | 制造商:n/a 功能描述:Power SCR |
| DCR1374SBA0303 | 制造商:n/a 功能描述:Power SCR |
| DCR1374SBA0404 | 制造商:n/a 功能描述:_ |
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