參數(shù)資料
型號(hào): DCR1275SD
廠商: Dynex Semiconductor Ltd.
英文描述: Phase Control Thyristor
中文描述: 相位控制晶閘管
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 65K
代理商: DCR1275SD
DCR1275SD
2/9
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
3.92 x 10
6
A
2
s
28.0
kA
2.53 x 10
6
A
2
s
22.5
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.036
Anode dc
Clamping force 22.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.004
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
20.0
24.0
kN
-55
125
o
C
-
On-state (conducting)
-
135
o
C
-
0.008
o
C/W
o
C/W
Cathode dc
-
0.044
o
C/W
Double side cooled
-
0.020
o
C/W
CURRENT RATINGS
T
case
= 80C unless stated otherwise.
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
1185
A
-
1860
A
-
1640
A
Half wave resistive load
805
A
-
1265
A
-
1035
A
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