參數(shù)資料
型號(hào): DCR1260Y
廠商: Dynex Semiconductor Ltd.
英文描述: Phase Control Thyristor Target Information
中文描述: 相位控制晶閘管目標(biāo)信息
文件頁數(shù): 7/10頁
文件大小: 147K
代理商: DCR1260Y
DCR1260Y
7/10
www.dynexsemi.com
Fig.6 Stored charge
Fig.7 Reverse recovery current
Fig.8 Maximum (limit) transient thermal impedance -
junction to case (C/W)
Fig.9 Sub-cycle surge currents
10000
1000
100
T
R
0.1
1.0
10
Rate of decay of on-state current, dI/dt - (A/μs)
100
Max
Min
Conditions:
T
j
= 125
C
I
T
= 900A
V
R
= 100V
I
RR
Q
RA3
I
T
dI/dt
25% I
RR
1000
100
10
P
R
0.1
1.0
10
Rate of decay of on-state current, dI/dt - (A/μs)
100
Max
Min
Conditions:
T
j
= 125
C
I
T
= 900A
V
R
= 100V
0
5
10
15
20
25
30
35
40
45
50
P
0
0.5
1.0
1.5
2.0
2.5
1
10
Pulse length, half sine wave - (ms)
9
8
7
6
5
4
3
2
I
2
t
2
s
6
)
I
TSM
(V
R
= 0)
I
TSM
(V
R
= 50% V
RRM
)
I
2
t (V
R
= 0)
I
2
t (V
R
= 50% V
RRM
)
10
1
0.1
0.01
0.001
Time - (s)
0.1
0.01
0.001
0.0001
T
C
Double side cooled
Anode side cooled
100
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case
C/W
Double side
0.0095
0.0105
0.0112
0.0139
Anode side
0.019
0.020
0.0207
0.0234
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